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          桂林雷光科技有限公司

          Partners in Digi-Com over Fibers


              雷光科技 位于山水甲天下的桂林,是一家集半導體激光器研發、制造于一體的晶圓工廠。本公司擁有三千余平米的晶圓制造車間,具有從芯片設計、外延、晶圓制造到解理測試的全套工藝。產品涵蓋2.5G、10G、25G到40G激光器和EML芯片。

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          公司產品


          Laser Diode

          FP DFB 2.5G 10G 25G 40G EML
          pdf
          chip
          The D3102R is a 1310nm directly modulated 2.5 Gbs single mode edge-emitting laser diode chip for use in uncooled applications. The design is a Ridge Wave Guide structure (RWG) on n-type InP substrate with multiquantum well (MQW) active layers and built-in distributed-feedback (DFB) grating. All laser chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for burn-in.
          Key Features
          • Direct modulation beyond 2.5Gbps
          • Uncooled operation
          • High reliability
          • Wide temperature range
          • Qualified per Telcordia GR-468
          Applications
            PON, ACCESS, Optical Ethernet,SDH
          pdf
          chip
          The D2710B/D2910B/D3110B/D3310B Series Products are directly modulated 10Gbps DFB edge emitting laser diode chips with 1270nm, 1290nm, 1310nm and 1330nm wavelength options. The center wavelength tolerance of these diodes is ±10nm and their operating temperature range is from – 40°C to +85°C. Product is available as tested die. All laser chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for burn-in.
          Key Features
          • Multi Quantum Well Distributed Feedback Laser
          • Reliable Buried Heterostructure Design
          • 1270nm/1290nm/1310nm/1330nm ±10nm tolerance
          • Direct modulation up to 10Gbps over operating temperature
          • Uncooled operation from –40°C to +85°C
          • Edge emitting laser (EEL)
          • Designed for Telcordia GR-468
          Applications
            QSFP, Optical Ethernet, Fiber Channel, Data Center
          pdf
          chip
          The D3125R is a directly modulated 25Gbps DFB edge emitting laser diode chip at 1310nm wavelength. The center wavelength tolerance of these diodes is ±10nm and their operating temperature range is from 0°C to +75°C. Product is available as tested die. All laser chips come from wafers that have been certified using a representative lot of devices that must achieve an acceptable yield for burn-in.
          Key Features
          • Multi Quantum Well Distributed Feedback Laser
          • Reliable Ridge Waveguide Design
          • 1310nm ±10nm tolerance
          • Direct modulation up to 25Gbps over operating temperature
          • Uncooled operation from 0°C to +75°C
          • Edge emitting laser (EEL)
          • Narrow Farfield
          • Designed for Telcordia GR-468
          Applications
            Wireless, Data Center, Telecom

          TO-CAN

          pdf
          chip
          The XD2710B/XD2910B/XD3110B/XD3310B Series Products are directly modulated 10Gbps DFB edge emitting laser diode chips with 1270nm, 1290nm, 1310nm and 1330nm wavelength options in coaxial TO-56 packages. The center wavelength tolerance of these diodes is ±10nm and their operating temperature range is from – 40°C to +85°C. Integrated within the coaxial package is an InGaAs monitor photodiode and a lensed cap.
          Key Features
          • 2.0mm high index ball lens in TO-56 package
          • Integral InGaAs monitor photodiode
          • Multi Quantum Well Distributed Feedback Laser
          • Reliable Buried Heterostructure Design
          • 1270nm/1290nm/1310nm/1330nm ±10nm tolerance
          • Direct modulation up to 10Gbps over operating temperature
          • Uncooled operation from –40°C to +85°C
          Applications
            QSFP, Optical Ethernet, Fiber Channel, Data Center
          pdf
          chip
          The XD2710B/XD2910B/XD3110B/XD3310B Series Products are directly modulated 10Gbps DFB edge emitting laser diode chips with 1270nm, 1290nm, 1310nm and 1330nm wavelength options in coaxial TO-56 packages. The center wavelength tolerance of these diodes is ±10nm and their operating temperature range is from – 40°C to +85°C. Integrated within the coaxial package is an InGaAs monitor photodiode and a lensed cap.
          Key Features
          • 7.5 mm focal length aspherical lens in TO-56 package
          • Integral InGaAs monitor photodiode
          • Multi Quantum Well Distributed Feedback Laser
          • Reliable Buried Heterostructure Design
          • 1270nm/1290nm/1310nm/1330nm ±10nm tolerance
          • Direct modulation up to 10Gbps over operating temperature
          • Uncooled operation from –40°C to +85°C
          Applications
            QSFP, Optical Ethernet, Fiber Channel, Data Center

          生產工藝





          聯系我們


          桂林雷光科技有限公司
          地址:桂林市高新區朝陽路國家信息產業園D-08光隆科技園
          電話:0773-3116599
          傳真:0773-3116597
          郵箱:sales001@glasercom.com


          桂林雷光科技有限公司深圳辦事處
          地址:深圳市南山區高新南九道45號三航科技大廈14樓1413室
          電話:18677322109
          Guilin Lasercom Technologies Co.,Ltd
          Add:Guanglong S&T Park, D-08 High-Tech Industry Park,Chaoyang Road,Guilin,Guangxi,China.
          Tel:0773-3116599
          Fax:0773-3116597
          E-mail:sales001@glasercom.com

          Guilin Lasercom Technologies Co.,Ltd. Shenzhen Office
          Add:Room 1413,4F,San Hang Technology Building, No.45 Ninth Road, Hi-tech South, Nanshan District, Shenzhen, Guangdong, China.
          Tel:18677322109

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